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Discrete Semiconductors

Browse Discrete Semiconductors electronic components from listed manufacturers.

Subcategories

Diodes & Rectifiers→Thyristors→Transistors→

Showing 81–95 of 95 results

SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET
SUM85N15-19-E3 D2Pak-3 NPN N-Channel 150 V TrenchFET Power MOSFET

MOSFETs

High-Efficiency TrenchFET Structure The SUM85N15-19-E3 employs Vishay’s advanced TrenchFET® technology, offering exceptionally low Rds(on) and optimized switching performance to reduce energy losses in demanding power systems. Robust Automotive-Ready Design With a 150 V breakdown voltage, 85 A current rating, and operation up to 175°C, this MOSFET is built to withstand the harsh conditions of automotive EPS, ABS, and DC/DC environments. Thermally Optimized D2PAK-3 Package The low thermal resistance D2PAK-3 package enhances heat dissipation, enabling a high power dissipation of 375 W and stable long-term performance even under heavy load.

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Onsemi 2N7002 Single MOSFET Transistors 60V 200mA TO-92 NOS
Onsemi 2N7002 Single MOSFET Transistors 60V 200mA TO-92 NOS

Transistors, MOSFETs

2N7002T from Onsemi delivers robust performance in compact form factor, combining industry-standard specifications with enhanced reliability. Designed for general-purpose switching applications, this MOSFET offers: AEC-Q101 qualified - Meets automotive-grade component reliability standards PPAP capable - Supports Production Part Approval Process documentation RoHS compliant construction - Eliminates hazardous substances (Pb, Hg, Cd, etc.) Halogen/BFR free - Environmentally friendly material composition

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Discrete semiconductors are standalone electronic parts performing single functions, including diodes, transistors (BJT, FET, MOSFET), thyristors, and rectifiers. Unlike integrated circuits (ICs), they handle specific tasks like amplification, switching, or power control. Selection depends on voltage, speed, and thermal requirements for the application. BJT vs. MOSFET for switching: Which should I choose? For high-speed, power-efficient switching (e.g., PWM, digital circuits), MOSFETs excel due to voltage control and minimal gate current. BJTs, being current-controlled, suit analog amplification but have higher power loss in switching. Prioritize MOSFETs for fast, low-power switching and BJTs for linear control. Key diode selection parameters? Critical specs include:
  • Forward current (IF): Max continuous current.
  • Reverse voltage (VR): Peak blocking voltage.
  • Reverse recovery time (trr): Critical for high-speed switching (use Schottky diodes for <10ns). Also consider power dissipation and package type (e.g., through-hole vs. SMD).
Why is thermal management vital for discrete semiconductors? Overheating reduces lifespan and reliability. Power devices (e.g., MOSFETs, rectifiers) require heatsinks, thermal pads, or PCB copper pours to dissipate heat. Always check junction temperature (Tj) limits and derate components in high-temperature environments. Can I interface discrete semiconductors directly with microcontrollers? Yes, but ensure compatibility:
  • BJT/MOSFET switching: Add base/gate resistors to limit current/voltage.
  • Logic levels: 5V/3.3V MCUs may need level shifters for high-voltage transistors.
  • Current drive: Verify MCU pins can supply enough current for the load.