Transistors

MOSFETs

Littelfuse IXFK98N50P3 Polar3™ Series - 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs), TO-264, RoHS

MOSFETs

Microchip APT18M100S Mosfet Mos8 1000 V 18 A To-268 2 To-268 Tube

MOSFETs

Littelfuse IXTH8P50 MOSFET - Single +FWD Discrete -8A -500V TO-247AD (

MOSFETs

Littelfuse IXTP2R4N120P Polar™ Series - 100V - 1200V N-Channel Standard Power MOSFETs, TO-220, RoHS

IGBTs

Microchip APT150GN120JDQ4 Trans IGBT Chip N-CH 1200V 215A 625000mW 4-Pin SOT-227 Tube

IGBTs

Microchip APTGLQ100A120TG High speed Trench + Field Stop IGBT4 Power module

BJTs

Microchip JANTX2N6383 Trans GP BJT NPN 40V 10A 2-Pin TO-3 Tray

BJTs

Microchip JANTXV2N3700UB Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

BJTs

Microchip JANTX2N3635UB Trans GP BJT PNP 140V 1A 1000mW 4-Pin Case UB Waffle

BJTs

Microchip 2N5153 Trans GP BJT PNP 80V 2A 1000mW 3-Pin TO-39 Bag

BJTs

Microchip JANTX2N1483 Trans GP BJT NPN 40V 3A 1750mW 3-Pin TO-8 Tray

BJTs

Microchip JANTXV2N6286 Trans Darlington PNP 80V 20A 3-Pin(2+Tab) TO-3

BJTs

Microchip JANTX2N6987 Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 4-Element, PNP, Silicon, TO-116

MOSFETs

High-Efficiency TrenchFET Structure The SUM85N15-19-E3 employs Vishay’s advanced TrenchFET® technology, offering exceptionally low Rds(on) and optimized switching performance to reduce energy losses in demanding power systems. Robust Automotive-Ready Design With a 150 V breakdown voltage, 85 A current rating, and operation up to 175°C, this MOSFET is built to withstand the harsh conditions of automotive EPS, ABS, and DC/DC environments. Thermally Optimized D2PAK-3 Package The low thermal resistance D2PAK-3 package enhances heat dissipation, enabling a high power dissipation of 375 W and stable long-term performance even under heavy load.

MOSFETs

Ultra-low conduction loss: RDS(on) 5.9 mΩ typ., 7 mΩ max @ VGS = 10 V, ID = 82 A. High current & ruggedness: ID = 140 A (Tc = 25 °C), IDM = 550 A, repetitive avalanche allowed up to Tj(max). High-temperature operation: qualified for 175 °C junction temperature with low RθJC = 0.45 °C/W for efficient heat flow.

MOSFETs

500mΩ RDS(ON) @ 2.5V – Superior efficiency in low-voltage systems SOT-523-3 Package – Fits high-density PCB designs 600mA Drain Current – Handles robust loads in portable electronics

Transistors, MOSFETs

2N7002T from Onsemi delivers robust performance in compact form factor, combining industry-standard specifications with enhanced reliability. Designed for general-purpose switching applications, this MOSFET offers: AEC-Q101 qualified - Meets automotive-grade component reliability standards PPAP capable - Supports Production Part Approval Process documentation RoHS compliant construction - Eliminates hazardous substances (Pb, Hg, Cd, etc.) Halogen/BFR free - Environmentally friendly material composition