Browse Infineon electronic components listed by MOZ Electronics.
Modules
The TT60N16SOF from Infineon provides high-efficiency switching in a compact module. Its integrated diode, high current capacity, and robust thermal performance make it ideal for demanding industrial and power electronics applications.
Modules
TDB6HK180N16RR_B11 is an Infineon EconoBRIDGE power module featuring a 1600 V half-controlled bridge rectifier and an integrated brake chopper IGBT for industrial drives, converters, active rectifiers and power supply systems.
Modules
TD120N16SOF is an Infineon 1600V, 120A thyristor / diode power module in a BG-SB20-1 package. It is designed for phase control, controlled rectifier, soft starter, UPS, drive, and battery charger applications where high current capability, electrical isolation, and reliable thermal performance are required.
Modules
The ETD580N16P60 is a 1600V, 580A press-pack thyristor module from Infineon’s Eco Block series . It is designed for demanding industrial power systems that require high current capability, strong overload performance, and reliable operation under repeated power cycling conditions. Its pressure-contact construction and short-on-failure behavior make it suitable for rectifiers, inverters, motor drives, UPS equipment, and other high-power conversion systems.
Microcontrollers MCUs
Infineon SAL-XC866L-4FRA 5V BE XC8 series Microcontroller IC 8-Bit 81MHz 16KB (16K x 8) FLASH PG-TSSOP-38-4
Circuit Protection, Transient Voltage Suppressors (TVS)
Automotive-grade protection: Survives ±30 kV IEC 61000-4-2 ESD and 5 A (8/20 µs) surge for CAN/LIN and 12/24 V rails. Signal-friendly capacitance: ~24 pF typ. line-to-line to preserve bus edges and bandwidth. Flexible SOT-23 pinout: Two-line unidirectional or single-line bidirectional (pins 1–2) by leaving pin 3 floating.
MOSFETs
Ultra-low conduction loss: RDS(on) 5.9 mΩ typ., 7 mΩ max @ VGS = 10 V, ID = 82 A. High current & ruggedness: ID = 140 A (Tc = 25 °C), IDM = 550 A, repetitive avalanche allowed up to Tj(max). High-temperature operation: qualified for 175 °C junction temperature with low RθJC = 0.45 °C/W for efficient heat flow.
